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This work reports the quantification of rise in channel temperature due to self-heating in two-terminal SrSnO3 thin film devices under electrical bias. Using pulsed current–voltage (I–V) measurements, thermal resistances of the thin films were determined by extracting the relationship between the channel temperature and the dissipated power. For a 26-nm-thick n-doped SrSnO3 channel with an area of 200 μm2, a thermal resistance of 260.1 ± 24.5 K mm/W was obtained. For a modest dissipated power of 0.5 W/mm, the channel temperature rose to ∼176 °C, a value which increases further at higher power levels. Electro-thermal simulations were performed which showed close agreement between the simulated and experimental I–V characteristics both in the absence and presence of self-heating. The work presented is critical for the development of perovskite-based high-power electronic devices. 

Derivation of partial charges in small and large scale molecular systems is important for modeling of various experimental and theoretical properties like dipole moments, auto-correlation functions, charge disparity, understanding of dispersion, benchmark of classical MD simulations and electrostatic potential energy surface mapping. A correspondence between theoretical calculations (based on single/small number of molecules) is usually established with macroscopic IR/Raman spectra or dipole moment measurements. Such comparisons are indirect and lack a fine mapping of electrostatic potential from theory to experiment. In a new approach developed as the experimental part of this work, partial charges are calculated from crystallographic model refinement. The experimental method exhibits a satisfactory correspondence with partial charges obtained using quantum chemistry calculations. Particularly, gas phase partial charges from CHELPG method and condensed phase Lowdin charges correlate well and validate this experimental method.